Integrated Tube Furnace System for Plasma-Enhanced Deposition
PECVD Tube Furnace is a tube furnace system designed for plasma-enhanced chemical vapor deposition. The system mainly consists of a quartz reaction chamber, RF power supply, multi-channel gas mixing system, vacuum unit, and reaction control system.
An RF induction device is arranged before the conventional chemical vapor deposition section. It ionizes the reaction gas to form plasma. The higher reaction activity of the plasma helps accelerate the film deposition process.
This structure is intended for material preparation processes that require film formation at relatively lower temperatures while also requiring control of film uniformity, repeatability, composition, and thickness.
1100°C Heating with Multiple Tube and Vacuum Configurations
The furnace chamber uses high-purity alumina fiber material with a high-temperature alumina coating on the surface. This structure is used to reduce heat loss and improve heating efficiency.
The operating temperature is 1100°C.
Available quartz tube sizes include Φ60 × 2200 mm, Φ80 × 2200 mm, Φ100 × 2200 mm, and Φ120 × 2200 mm. The listed power range is 3–5 kW.
Resistance wire is used as the heating element. The heating rate is 1–20°C/min, and the voltage can be selected as 220 V or 380 V.
Vacuum options include -0.1 MPa, 10 Pa, and 6.67 × 10⁻⁴ Pa. Buyers can select the vacuum configuration according to the required thin-film growth process.
Process Selection Based on the Complete Deposition System
PECVD Tube Furnace can be used for the growth of graphene, silicon monoxide, silicon nitride, silicon oxynitride, amorphous silicon, and other listed films.
For this equipment, purchasing decisions involve more than furnace tube diameter. The tube determines the effective reaction space, while the RF system influences plasma generation. The multi-channel gas system controls reaction gas mixing, and the vacuum unit determines the reaction environment.
Before equipment configuration is confirmed, buyers should clarify the target material, substrate size, reaction gas type, required flow range, vacuum requirement, and temperature program.
This system-level approach helps avoid selecting equipment only according to tube diameter while overlooking the gas, RF, and vacuum requirements of the deposition process.
Custom Reaction Chambers and Order Control
Nengcheng Crystal has established production capabilities for high-purity alumina fiber and high-temperature furnace insulation products, including material development, wet vacuum forming, and finished-product machining.
For a non-standard reaction chamber, special tube size, or multi-channel gas configuration, OEM and ODM development can be discussed according to technical drawings or physical prototypes.
Customized production normally requires 20–45 days. Photos or videos can be provided during manufacturing.
Equipment is normally inspected before packaging, and third-party inspection is accepted. After delivery, dedicated personnel continue to handle after-sales communication.
Product Specifications
|
Parameter |
Specification |
|
Operating Temperature |
1100°C |
|
Furnace Tube Size |
Φ60 × 2200 to Φ120 × 2200 mm |
|
Power Range |
3–5 kW |
|
Heating Rate |
1–20°C/min |
|
Vacuum Level |
-0.1 MPa, 10 Pa, 6.67 × 10⁻⁴ |
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